This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT(绝缘栅双极晶体管)特性的基础上,设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
In chapter 5, the on-screen driving circuits composed of P-channel TFT have been designed, including inverter, shift register, transmission gate and simulated using simulation software.
第五章设计了全p沟道tft构成的屏上驱动电路,包括反相器、移位寄存器、传输门的设计,并用仿真软件进行了仿真验证。
A combinational structure of the transmission gate in the inverter control with different threshold voltages is presented.
提出了一种不同阈值电压反相器控制的传输门组合结构。
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